Condensed Matter

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here we demonstrate a dual-gated junctionless nanowire \emph{p}-type field effect transistor using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows us to achieve a phonon-limited field effect hole mobility of 570c m 2 /V?�s at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to 1390c m 2 /V?�s and becomes primarily limited by Coulomb scattering. \txc{The combination of an electron affinity of ??4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface}, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of 216μA/μm while maintaining an on-off ratio in excess of 2? 10 4 . The findings have intriguing prospects for alternate channel material based next-generation electronics.

Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial neuronal functionality when executing repeated tasks. In this study, we demonstrate that this behavior can be implemented in DW-MTJ artificial neurons via three alternative mechanisms: shape anisotropy, magnetic field, and current-driven soft reset. Using micromagnetics and analytical device modeling to classify the Optdigits handwritten digit dataset, we show that edgy-relaxed behavior improves both classification accuracy and classification rate for ordered datasets while sacrificing little to no accuracy for a randomized dataset. This work establishes methods by which artificial spintronic neurons can be flexibly adapted to datasets.

Comprehensive control of the domain wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories over domain-wall logic concepts to nanomagnetic logic. In this work, focused Ga+ ion-irradiation is investigated as an effective means to control domain-wall nucleation in Ta/CoFeB/MgO nanostructures. We show that analogously to He+ irradiation, it is not only possible to reduce the perpendicular magnetic anisotropy but also to increase it significantly, enabling new, bidirectional manipulation schemes. First, the irradiation effects are assessed on film level, sketching an overview of the dose-dependent changes in the magnetic energy landscape. Subsequent time-domain nucleation characteristics of irradiated nanostructures reveal substantial increases in the anisotropy fields but surprisingly small effects on the measured energy barriers, indicating shrinking nucleation volumes. Spatial control of the domain wall nucleation point is achieved by employing focused irradiation of pre-irradiated magnets, with the diameter of the introduced circular defect controlling the coercivity. Special attention is given to the nucleation mechanisms, changing from a Stoner-Wohlfarth particle's coherent rotation to depinning from an anisotropy gradient. Dynamic micromagnetic simulations and related measurements are used in addition to model and analyze this depinning-dominated magnetization reversal.

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In the presence of the attractive interaction, an AA-stacking of BN-codoped BLG is formed with a less stable structure leading to weak mechanical properties of the system. Low values of the Young modulus, the ultimate strength and stress, and the fracture strength are observed comparing to a pure BLG. In addition, the attractive interaction induces a small bandgap that deteriorates the thermal and optical properties of the system. In contrast, in the presence of a repulsive interaction between the B and N atoms, the AA-stacking is converted to a AB-stacking with a more stable structure. Improved mechanical properties such as higher Young modulus, the ultimate strength and stress, fracture strength are obtained comparing to the AA-stacked BN-codoped BLG. Furthermore, a larger bandgap of the AB-stacked bilayer enhances the thermal and the optical characteristics of the system.

We numerically and experimentally study corner states in a continuous elastic plate with em-bedded bolts in a hexagonal pattern. While preserving C6 crystalline symmetry, the system can transition from a topologically trivial to a non-trivial configuration. We create interfacial corners of 60° and 120° by adjoining trivial and non-trivial topological configurations. Due to the rich interaction between the bolts and the continuous elastic plate, we find a variety of corner states with and without topological origin. Notably, some of the corner states are highly localized and tunable. By taking advantage of this property, we experimentally demonstrate one-way corner localization in a Z-shaped domain wall.

The fractional quantum Hall effect (FQHE) is extensively studied, but the explanation for Hall plateau widths and excitation energy gaps remains elusive. We study the effective theory of FQHE built upon experimental inputs of Hall current distribution, edge dynamics, and many-body correlations. We argue that correlated composites of integer spin, comprising electrons and their images, localized at the edge of the incompressible strip are the basic transport entity. We show in the lowest Landau level that Zeeman interactions of these composites produce all odd denominator plateaus and effective fractional charges. Utilizing field-dependent chemical potential and effective g-factor, we fully explain the observed Hall resistivity curve and excitation energy gaps of the half-filling family. The plateau heights are systematically generated by multi-particle correlations, whereas the plateau widths and excitation energy gaps are determined by the correlation strengths. We explicitly show that the Drude-like behavior at half-filling follows from equal strength of multi-particle correlations.

Energy gaps are ubiquitous in the solid state. While in superconductors the Bardeen-Cooper-Schrieffer gap comes from Cooper pairing mediated by the crystal lattice, in Mott insulators the Coulomb gap results instead from electron-electron interactions. These gaps can be populated by subgap states due to various mechanisms. Here we demonstrate the existence of \textit{Coulombic} states, a new type of subgap states arising in a device with an energy gap opened by both Cooper pairing and Coulomb repulsion. The hybrid gap is provided by a superconducting island in Coulomb blockade, while the states arise due to electron transfer between the island and a nearby quantum dot. The Coulomb interaction in the device produces an unusual excitation spectrum exhibiting broken electron-hole energy symmetry, discontinuity of spectral curves, strongly renormalized g-factors and high-degeneracy points. The repercussions of the new states for the search of Majorana states in topological superconducting islands are elucidated.

Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter/absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption/luminescence and charge carrier generation/recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge carrier models to predict device performance. To examine this assumption, we develop a fully-coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results to past methods that do not consider cross-influences between charge and radiation transport, we find that a fully-coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. Because these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems.

We consider the superconductor-semiconductor nanowire hybrid Majorana platform ("Majorana nanowire") in the presence of a deterministic spatially slowly varying inhomogeneous chemical potential and a random spatial quenched potential disorder, both of which are known to produce non-topological almost-zero energy modes mimicking the theoretically predicted topological Majorana zero modes. We study the crossover among these mechanisms by calculating the tunnel conductance while varying the relative strength between inhomogeneous potential and random disorder in a controlled manner. We find that the entire crossover region manifests abundant trivial zero modes, many of which showing the apparent `quantization' of the zero-bias conductance peak at 2 e 2 /h , with occasional disorder-dominated peaks exceeding 2 e 2 /h . We present animations of the simulated crossover behavior, and discuss experimental implications. Our results, when compared qualitatively with existing Majorana nanowire experimental results, indicate the dominant role of random disorder in the experiments.

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT leads to a lower noise floor in the experimental setup and enables more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.