All-electrical measurement of spin injection in a magnetic p - n junction diode
Peifeng Chen, Juergen Moser, Philipp Kotissek, Janusz Sadowski, Marcus Zenger, Dieter Weiss, Werner Wegscheider
Abstract
Magnetic
p
-
n
junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk semiconductor (
n
-GaAs) via schottky contact. For detection, a diluted magnetic semiconductor (
p
-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the
p
-
n
junction.