Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals
K. Racka, I. Kuryliszyn, M. Arciszewska, W. Dobrowolski, J.-M. Broto, M. Goiran, O. Portugall, H. Rakoto, B. Raquet, V. Dugaev, E. I. Slynko, V. E. Slynko
Abstract
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.