Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots
Abstract
The near-field scanning optical microscopy images of excitonic wavefunctions in self-assembled InAs/GaAs quantum dots are calculated using an empirical pseudopotential method, followed by the configuration interaction (CI) treatment of many-particle effects. We show the wavefunctions of neutral exciton
X
0
of different polarizations, and compare them to those of the biexciton
XX
and the charged excitons
X
+
and
X
−
. We further show that the exciton
X(
P
h
→
S
e
)
transition which is forbidden in the far-field photoluminescence has comparable intensities to that of
X(
S
h
→
S
e
)
transition in the near-field photoluminescence .