Metallic state in La-doped YBa 2 Cu 3 O y thin films with n -type charge carriers
S. W. Zeng, X. Wang, W. M. Lü, Z. Huang, M. Motapothula, Z. Q. Liu, Y. L. Zhao, A. Annadi, S. Dhar, H. Mao, W. Chen, T. Venkatesan, Ariando
Abstract
We report hole and electron doping in La-doped YBa
2
Cu
3
O
y
(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in oxygen ambient and vaccum. The
n
-type samples show a metallic behavior below the Mott limit and a high carrier density of
∼2.8
×
10
21
cm
−3
at room temperature (\emph{T}) at the optimally reduced condition. The in-plane resistivity (
ρ
ab
) of the
n
-type samples exhibits a quadratic \emph{T} dependence in the moderate-\emph{T} range and shows an anomaly at a relatively higher \emph{T} probably related to pseudogap formation analogous to underdoped Nd
2−x
Ce
x
CuO
4
(NCCO). Furthermore,
ρ
ab
(T), \emph{T}
c
and \emph{T} with minimum resistivity (\emph{T}
min
) were investigated in both
p
- and
n
-side. The present results reveal the
n
-
p
asymmetry (symmetry) within the metallic-state region in an underdoped cuprate and suggest the potential toward ambipolar superconductivity in a single YBCO system.