Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm
D. S. L. Figueira, D. Mustafa, L. R. Tessler, N. C. Frateschi
1 Resonant structures based on amorphous silicon sub-oxide doped with Er with silicon nanoclusters for an efficient emission at 1550 nm D. S. L. Figueira , D. Mustafa , L. R. Tessler and N. C. Frateschi
1, 3 Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas-UNICAMP, São
Paulo, 13083-970, Brazil. Max Planck Institut für Metallforschung, Heisenbergstr 3, Stuttgart 70569, Germany and Universität Stuttgart Institut für Materialwissenschaft Heisenbergstr 3, Stuttgart 70569, Germany Center for Semiconductor Components, Universidade Estadual de Campinas-UNICAMP, São
Paulo, 13083-870, Brazil Abstract We present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon sub-oxide doped with Er (a-SiO x
Introduction
The use of silicon-based material for photonic applications is very attractive because it allow the integration of CMOS technology and photonics . Numerous attempts to obtain gain or employ Si as an active medium for direct application in optoeletronic have been reported
2, 3, 4, 5, 6 . However, this task has been shown difficult to accomplish and many alternatives were recently demonstrated, such as Raman amplification , hybrid integration with III-V alloys , Si-NC formation in amorphous Si matrices , and doping with rare-earth materials
10, 11 . Particularly, Si doped with Er appears to be interesting to telecom applications due to the strong emission at 1550 nm . One method to obtain a matrix of amorphous silicon doped with Er (a-Si
15, 16 . In both cases the electrons in Er are excited from I to I levels. One common way to enhance the efficiency of the emission at 1550 nm is accessing the Er transition I I using an external pump at 980 nm . Another way, less frequently used, would be use the transition I to I at 807 nm . Samples of a-Si
We present a technique to fabricate a-SiO x
This work was supported by the Coordenação de Aperfeiçoamento de Pessoal de Ensino Superior (CAPES), the Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), the Centro de Pequisa em Óptica e Fotônica (CePOF), and Instituto Nacional de Ciência e Tecnologia (INCT- FOTONICON). 8
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Fig. 1. (a)Photoluminescence spectra in the 800 nm region for samples submitted to different temperatures; (b) Photoluminescence spectra in the 1550 nm region for samples with no annealing and with different annealing temperatures. Maximum PL intensity occurs for a sample annealed ate 400º C (open circles) and at 1150º C (solid line).
Fig. 2.
Transmission Electron Microscopy micrograph of Si nanocluster obtained after annealing at 1150ºC for 1 hour.
Fig. 3:
Calculated optical field intensity within the 600 nm a-SiOx
Maximum PL intensity in the 800 nm region as a function of SiO thickness. (b) Maximum PL intensity in the 1550 nm region as a function of SiO thickness. The dashed line indicates the maximum PL intensity obtained for samples without the SiO layer. Figure 1
600 700 800 900 1000 11000,00,20,40,60,81,0 P L i n t en s i t y ( a . u . ) Wavelength (nm) as. depos. 1100 o C 1150 o C 1200 o C P L i n t en s i t y ( a . u . ) Wavelength (nm)
As depos. 400 o C 1100 o C 1150 o C 1200 o C (a)(b) Figure 2
Figure 3 I n t en s i t y ( u . a ) a-SiOx
SiO2 thickness : 530 nm
Figure 4 a-SiO x
150 200 250 300 350 400 450 500 5500200400600800 a - S i O x < E r > m a x i m u m P L i n t en s i t y ( u . a ) SiO thickness (nm)emission without SiO2 layer
150 200 250 300 350 400 450 500 5500246 S i - NC m a x i m u m P L i n t en s i t y ( u . a ) SiO thickness (nm) a-SiOx