In modern semiconductor manufacturing, the quality of thin films is often the key to success or failure. With the continuous advancement of science and technology, plasma chemical vapor deposition (PECVD) technology has gradually become the preferred choice in the industry. This technology allows us to achieve precise control of thin films at relatively low temperatures and achieve excellent performance and quality.
Plasma chemical vapor deposition is a process that converts gaseous precursors into solid thin films and relies on a series of complex chemical reactions.
The core of PECVD is to use plasma to promote chemical reactions. It is usually excited by radio frequency (RF) or direct current (DC). Plasma is generated by discharge between two electrodes in an environment full of reactive gases. . These gases react at relatively low pressures to complete the thin film deposition process.
The properties of plasma are crucial for the processing of materials. In many cases, only about 10% to 20% of the atoms or molecules in the plasma are ionized. The level of this ionization rate directly affects the efficiency of energy exchange between electrons and neutral atoms. Because electrons are lighter than atoms and molecules, they can be maintained at an equivalent temperature of up to tens of thousands of Kelvin in a high plasma generation environment. This allows processes that are impossible under conventional conditions to occur even at low temperatures, including the dissociation of precursors and the generation of a large number of free radicals.
Plasmas facilitate many processes that do not readily occur at low temperatures, which offers special possibilities for the deposition of thin films.
During the deposition process, electrons have a higher mobility than ions, which causes the plasma to generally present a more positive potential than the object it contacts. In this case, ionized atoms or molecules are attracted by electrostatic forces and accelerated toward the adjacent surface. Due to this phenomenon, all surfaces exposed to the plasma are bombarded by high-energy ions. This bombardment helps to increase the density of the film and remove contaminants, thereby improving the electrical and mechanical properties of the film.
There are also many different types of reactors used in the PECVD process. Generally, electric current discharge can be generated between two conducting electrodes under pressure of a few Torr, but whether this method is applicable to insulating films is questionable. Therefore, it is more common to form capacitive discharges using high-frequency signals applied between the conductive walls of the reactor. Such reactors operate at extremely low frequencies (e.g., around 100 kHz) and typically require hundreds of volts to maintain the discharge, which results in a bombardment of the surface with high-energy ions. In a high-frequency environment, the displacement movement and scattering of current help ionization, thereby reducing the required voltage and increasing the density of the plasma.
PECVD is widely used in semiconductor manufacturing, especially in scenarios requiring low temperature and fast deposition. For example, during the deposition of silicon dioxide, high-quality films can be formed using precursors such as dichlorosilane and oxygen. Silicon nitride is also commonly formed by reacting silane with ammonia or nitrogen.
The properties of thin films are closely related to the deposition process. The thin films obtained by vapor deposition show excellent performance in many electronic devices, which makes PECVD technology more advantageous.
As the demand for thin film manufacturing continues to increase, PECVD will continue to consume technological innovations, paving the way for the manufacture of more sophisticated thin film structures. In the future, we can expect widespread application of this technology in various industries, whether in electronics, optoelectronics or material science. This also makes us wonder: With the advancement of technology, will future thin film technology exceed the limits of what we can currently understand?