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Exploring the secrets of plasma generation: Why are the collisions of electrons and atoms so critical?
With the advancement of technology, plasma etching technology has become an indispensable tool in semiconductor manufacturing. This technology uses a high-speed electrical discharge (plasma) to emit a suitable mixture of gases at a sample to create integrated circuits. The generation of plasma is closely related to the occurrence of chemical reactions and collisions between electrons and atoms, which has triggered more exploration of the nature of plasma in the scientific community.
Generation of plasma
Plasma is a high-energy state in which a variety of processes occur. These processes are driven by interactions between electrons and atoms. To form a plasma, electrons must gain enough energy to accelerate. When high-speed moving electrons collide with atoms, energy is transferred to the atoms, resulting in different effects, such as excitation, dissociation, and ionization.
During the plasma etching process, electrons, ions, free radicals and neutral particles continuously interact to form the chemical substances required for etching.
How to affect the etching process
The key to successfully developing complex etching processes is finding the right gas etching chemistry. Depending on the material, it may be necessary to adjust the environmental conditions of the etching process, such as air pressure, gas composition and vacuum level, to generate volatile compounds and thereby improve the etching effect.
Without plasma, reactions would take place at higher temperatures, but with plasma, many processes can occur at room temperature, which helps prevent material damage.
Surface interaction
The effectiveness of etching also depends on the probability of reactions between different atoms, photons or radicals. Surface temperature also affects the efficiency of these reactions. In a plasma, certain species gather and reach the surface, forming a thin oxide layer. These volatile products desorb during the plasma stage, further promoting the etching process. However, if the product is not volatile, it may form a film on the surface of the material, affecting the etching effect.
Different types of plasma etching
Pressure is an important factor affecting the plasma etching process. In order to generate low-pressure plasma, the reaction chamber needs to be maintained in a pressure range lower than 100Pa. Using high-frequency electric fields to excite gas is an important step in generating plasma.
Microwave plasma etching uses microwave frequency excitation sources to achieve plasma production at higher energy, thereby enabling efficient etching.
Wide range of applications
Plasma etching technology is currently widely used in the processing of semiconductor materials. This technology can carve small features into the surface of semiconductor materials to improve the performance of electronic devices. For example, plasma etching can be used to create deep grooves in silicon surfaces, which are important for the fabrication of microelectromechanical systems. With the deepening of research, the application potential of plasma etching at the nanoscale has become increasingly prominent.
Integrated circuits and printed circuit boards
In the manufacturing of integrated circuits, plasma is used to grow silicon oxide films, or fluorine gas is used to remove silicon oxide films. When used in conjunction with photolithography, plasma can be selectively applied or removed to precisely trace circuit paths on a wafer. In addition, plasma technology is also used for etching of printed circuit boards, including the removal of deposits.
The development of plasma etching technology is not limited to current applications. With the advancement of science and technology in the future, this technology may be applied in a wider range of fields and exert greater potential. In this rapidly changing world, can we also expect new technological breakthroughs that will gradually reveal the secrets of plasma?
