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From 1926 to the present: How did gallium arsenide change the face of electronics?
Gallium arsenide (GaAs), a III-V straight bandgap semiconductor, not only leads technological breakthroughs in the field of physics, but also plays an indispensable role in the development history of electronic products. Since its first synthesis in 1926, The application range of gallium arsenide covers many high-tech devices such as microwave frequency integrated circuits, infrared light-emitting diodes, and even solar cells. With the evolution of technology, gallium arsenide has an increasingly profound impact on electronic products.
Gallium arsenide is widely used in modern electronic engineering, and its existence has greatly improved our expectations for the performance of electronic products.
Historical background
The discovery of gallium arsenide originated from the research of Victor Goldschmidt and his partner Donder Vwishuna, who first synthesized it in 1926. By mixing arsenic vapor with hydrogen, it is successfully reacted with gallium trioxide at a high temperature of 600°C to form a gallium arsenide compound. In 1951, Heinrich Wilke applied for a patent at Siemens on the semiconductor properties of gallium arsenide and other III-V compounds, laying the foundation for the further commercialization of this technology. In 1954, commercial production of single crystals of gallium arsenide was officially launched, and in 1962, the world's first infrared LED was born on this basis.
Preparation and Chemistry
Gallium arsenide single crystals can be prepared through three main industrial processes, all of which involve liquid-embedded Czochralski growth techniques. The process is characterized by the production of high-purity semiconductor single crystals, including semi-insulating properties, which enable the application of GaAs at high-frequency operation.
With the advancement of various GaAs preparation technologies, the diversification of electronic products has also been further expanded.
Applications in electronic products
Digital logic and electricity meter
One of the main applications of gallium arsenide in electronic products is in digital logic circuits. GaAs has high electron mobility, which allows electronic components to operate at frequencies exceeding 250 GHz. Although its manufacturing cost is lower than silicon, its advantages in high-performance applications and other technologies have made GaAs gradually attract attention.
In certain high-frequency designs, GaAs technology has performance advantages that cannot be compared with silicon.
Optoelectronic components
Although GaAs still faces challenges in terms of high cost, it has great potential in optoelectronic components. As early as 1962, GaAs was used in near-infrared laser diodes. In terms of solar cells, the efficiency of GaAs single crystal thin film solar cells has gradually increased and currently exceeds 32%.
GaAs solar cells have shown extremely high efficiency in space applications, greatly promoting the development of related technologies.
Future Outlook
Although the application of GaAs has shown obvious advantages in electronic products, its popularization in a wide range of markets still faces cost challenges. The current production cost of GaAs solar cells is much higher than that of traditional technologies, mainly due to its unique manufacturing technology and material selection.
Fortunately, the rapidly growing photovoltaic technology market has prompted developers to seek ways to reduce costs, including the development of new materials and the optimization of existing manufacturing processes.
Conclusion
With the advancement of science and technology, the contribution of gallium arsenide in global electronic products cannot be underestimated. Whether in communications, satellite technology or other high-tech equipment, the potential of GaAs is gradually being recognized by the market. Therefore, how many new technologies will be born in the future that rely on the revolutionary progress of gallium arsenide?
