Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Abstract

Highly sensitive photodetectors with single-photon level detection are one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias are demonstrated. Top-down etched, heavily doped p-type InP nanowires and n-type aluminium-doped zinc oxide (AZO)/zinc oxide (ZnO) carrier-selective contact are used to form a radial p-n junction with a built-in electric field exceeding 3 × 105 \xa0V cm-1 \xa0at 0\xa0V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0\xa0V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600\xa0MHz with a timing jitter of 538\xa0ps. The proposed device design provides a new pathway toward low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.