Design Optimization of Doping-less InGaAs TFET and GaAs/Si-Heterojunction Doping-less TFET for Potential Breast Cancer Sensing Applications

Abstract

This work demonstrates in-depth comparative analysis for the performance optimization of doping-less InGaAs TFET and GaAs/Si-heterojunction doping-less TFET (GaAs/Si-HJDL-TFET). As doping-less TFET is a prominent device in terms of lower sub-threshold slope (SS)(<60 mV/decade) and it realizes steep switching speed. Lower bandgap materials such as InGaAs are deployed, which results in the narrowing of tunneling width which causes a large amount of carriers that can tunnel across the source-channel junction and thereby increases the drive current significantly. Moreover, to suppress the ambipolar current, heterojunction structure is very helpful. Furthermore, device structure optimization has been achieved with the mole fraction (x) composition variation of In(1−x)GaxAs in both the devices. Study reveals that GaAs/Si-HJDL-TFET structure represents enhanced performance in terms of lower SS, minimum threshold voltage and greater ION/IOFF ratio. Interestingly, the charge sensitive characteristics of the reported device can be deployed for detection of C-erbB-2 protein, the breast cancer bio-marker sensing applications.