Analog Integrated Circuits and Signal Processing | 2019
A 2.99 dB NF 15.6 dB Gain 3-10GHz Ultra-wideband low-noise amplifier for UWB systems in 65 nm CMOS
Abstract
A low noise figure (NF) and high power gain (S21) 3–10\xa0GHz ultra-wideband (UWB) low noise amplifier (LNA) in 65\xa0nm CMOS technology is proposed for UWB system which has a high figure of merit. A shunt–shunt resistive feedback technique is used to achieve wideband input impedance matching. A differential current-reused structure is used to achieve high common noise suppression and low power consumption. The implemented LNA achieves a high and flat aS21 of 15.6\u2009±\u20091.07\xa0dB with an input return loss (S11) which is better than −\u20098.7\xa0dB and a low NF of 2.99\u2009±\u20090.18\xa0dB at frequencies of 3–10\xa0GHz. The measured input third-order intermodulation point (IIP3) is −\u20095.7\xa0dBm at 6\xa0GHz.