Journal of Materials Science: Materials in Electronics | 2021

Gamma, neutron, and charged-particles shielding properties of tellurite glass system containing Sb2O3 and V2O5

 
 
 
 
 
 
 
 

Abstract


Tellurite glass systems become an essential component for several medical and nuclear technologies. Radiation shielding characteristics of a newly developed tellurite glasses containing Sb2O3 and V2O5 in energy range from 0.1 to 10 MeV are reported in this work. A FLUKA simulation along with a suitable theoretical model is carried out to examine the shielding performance of the involved glass system against gamma, neutron, and charged-particles radiations. HVLs of the TSP glasses vary in order of TSP-D\u2009<\u2009TSP-C\u2009<\u2009TSP-B\u2009<\u2009TSP-A, whereas both Zeff values and Neff values have the following tend: TSP-A\u2009<\u2009TSP-B\u2009<\u2009TSP-C\u2009<\u2009TSP-D. TSP-D has the biggest µen/ρ values in the present TSP glasses. Ranges of electron, proton, alpha, and carbon enhance by stages as energy rises. The ∑R\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sum {_{R} }$$\\end{document} value of TSP-A is the highest among the TSP glasses. Penetration depth values boost as the neutron energy increases, whereas total cross-section values descend as the energy enhances. We found that the addition of Sb2O3 content plays an important role to evolve the shielding ability against gamma and thermal-neutron radiations; however, the Sb2O3 addition has no significant influence on the shielding ability against charged-particles and fast-neutron radiations. Therefore, the suggested glass system showed a potential use in the radiation application whether this is in a hospital or any nuclear facility.

Volume None
Pages 1 - 12
DOI 10.1007/s10854-021-07204-7
Language English
Journal Journal of Materials Science: Materials in Electronics

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