Journal of Electronic Materials | 2021
Anisotropic Optoelectronic Properties of MAPbI3 on (100), (112) and (001) Facets
Abstract
Large-size single crystals of MAPbI3 were grown using inverse temperature crystallization. The crystalline anisotropy is important for understanding, designing and controlling the growth and properties of MAPbI3 series materials. The optoelectronic performances using MAPbI3 crystals with three different orientations of (100), (112) and (001) were studied, which revealed the anisotropic optoelectronic properties. The responsivity of the (112) facet of MAPbI3 reaches 7.08 mA/W which shows excellent optoelectronic properties.