Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET

Abstract

This work presents the analog and RF performance evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have been compared with conventional FinFET and GAA FinFET. It has been observed that in comparison to conventional FinFET, leakage current (I off ) reduces by almost thirty times for the GS-GAA FinFET configuration. Thus, revamping the threshold voltage (V th ), switching ratio (I on /I off ), and subthreshold slope (SS) of the proposed device. Also, major analog parameters like transconductance (g m ), transconductance generation factor (TGF) enhances considerably with early voltage (V EA ) and intrinsic gain (A v ) increased by over two times in magnitude for the GS-GAA FinFET configuration. Furthermore, several important RF parameters have been explored, and the outcome of the study is that the GS-GAA FinFET configuration shows superior RF performance. In GS-GAA FinFET configuration, the gain frequency product (GFP) and gain transconductance frequency product (GTFP) amplified by over two times in magnitude with minimal decrease in the cut-off frequency (f T ) and maximum oscillation frequency (f max ). Thus, the proposed GS-GAA FinFET device can be looked upon as an appealing option for high-frequency analog/RF applications.