Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications

Abstract

A new analytical model for a Junctionless Field Effect Transistor that can be used in biosensor applications is proposed in this research work. The Semiconductor device analyzed here employs a Gate-All-Around structure made of two dissimilar materials. The main objective of the surrounding gate is to reduce the Short Channel Effects owing to its scalability. This model introduces a novel dual material structure embedded with a nanocavity to make it suitable for biosensing applications. 2-D Poisson’s equation is solved using the Finite Differentiation Method to obtain the surface potential, which in turn is employed to determine the electric field and threshold voltage of the proposed structure. Finally, the biosensor sensitivity of the device is analyzed and the obtained results are verified using 2D TCAD simulations.