Influence of Nano Silicon Carbide (SiC) Embedded in Poly(Vinyl Alcohol)(PVA) Lattice on the Optical Properties

Abstract

The Poly(vinyl alcohol) (PVA)/Silicon Carbide (SiC) nanocomposites thin films have been precipitated on glass substrates with different percentage content of SiC (1%, 2%, 3%, and 4% wt.) by utilizing the casting method. UV-Visible wavelength ranges from (200–800 nm) were used to compute the optical properties. The results of (PVA/SiC) nanocomposite thin films were used to calculate optical properties such as absorption, refractive, index, extinction factor, dielectric constants, and optical conductivity. The optical parameters increased with increasing the concentration of SiC nanoparticles. The energy gap for direct transition has decreased from 5.2 eV to 5.0 eV, while the indirect transition reduced from 4.3 eV to 4.0 eV. The direct forbidden dropped from 5.1 eV to 5.0 eV, but the value of indirect forbidden change from 4.0 eV to 3.6 eV. The results stated that increases in nano SiC in the structure of PVA lattice is accompanied with decreasing the energy gap value. The results have shown that the urbach energy of (PVA/SiC) increase with increasing SiC content. The dielectric constant high-frequency values were estimated at 3.534 to 2.755. Whereas carrier concentricity per the effective mass Nm∗\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ \\left(\\frac{\\boldsymbol{N}}{{\\boldsymbol{m}}^{\\ast }}\\right) $$\\end{document} declines from (7.905*1061 (m3. Kg)−1 to 2.408\u2009×\u20091061 (m3. Kg)−1), while the unique oscillator energy range change from 6.073 eV to 20.685 eV. But regarding the energy of the dispersion decrease from 4.625 eV to 46.484 eV. The (PVA/SiC) thin films may be used in many fields of optoelectronics as: solar cells and electronic applications with low cost, which is used in spectroscopic features and electronics.