Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

Abstract

Highlights Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon electroluminescence rate and second-order coherence. The developed method is based on the measurements at the single defect level. Therefore, in contrast to other approaches, one point defect is sufficient to measure its electron and hole capture cross sections. Abstract Point defects in the crystal lattice of SiC, known as color centers, have recently emerged as one of the most promising single-photon emitters for non-classical light sources. However, the search for the best color center that satisfies all the requirements of practical applications has only just begun. Many color centers in SiC have been recently discovered but not yet identified. Therefore, it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources. Here, we present a theoretical approach that explains the experiments on single-photon electroluminescence (SPEL) of novel color centers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them. Moreover, we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence. Unlike other methods, the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p–i–n diode. Graphic Abstract