Dielectric Properties of P3BT Doped ZrY2O3/CoZrY2O3 Nanostructures for Low Cost Optoelectronics Applications

Abstract

In the present research work, low cost, high corrosion resistance, light weight films of ZrY2O3/CoZrY2O3 nanostructures (NS) (1:1 molar ratio) doped with P3BT (poly-3-butyl thiophene) (3 wt%, 5 wt% and 8 wt%) were synthesized by precipitation method and characterized by scanning electron microscopy (SEM), SEM–EDX, UV–visible, X-ray photoelectron spectroscopy (XPS), Fourier infrared spectroscopy (FT-IR), X-ray diffraction (XRD) spectroscopic analysis. The fabricated nanostructures studied for their dielectric and optoelectronic properties. XRD diffraction pattern indicated mixed cubic and hexagonal structure of the material and FT-IR spectra showed shift in the peak position to higher wavenumber with the increased addition of P3BT to the NS. Chemical composition analysis showed binding energies of P3BT: ZrY2O3/CoZrY2O3 NS with peak centred at 162.2 eV, 156.6 eV, 182.7 eV, 180.4 eV, 794.6 eV and 778.9 eV corresponds to Y 3d3/2, Y 3d5/2, Zr 3d3/2, Zr 3d5/2, Co 2p3/2 and Co 2p5/2 respectively. Dielectric properties for 8 wt% P3BT doped NS indicated the increase of dielectric constant (9.7) with dielectric loss of 0.018 for 250 nm thickness of the NS. Electrical conductivity as 45.8%, 47.1% and 52.4% with the increase content of P3BT: ZrY2O3/ZrCoY2O3 NS to 8 wt%. Optical characteristics results showed that absorption has been increased to 48% and energy gap decreased to 12.5%, charge mobility of 2056 cm2/V/S with\u2009~\u200910 kΩ/cm2 sheet resistance with 90% of optical transmittance. The NS can be used to fabricate the electronic devices like light emitting diodes, field effect transistors, photovoltaic cells and have prominent applications in photonic and electronic industries.