Archive | 2019
Dopants in Atomic Layer Deposited HfO2 Thin Films
Abstract
Abstract The ferroelectricity in doped HfO2 was first reported in 2011, and has been intensively studied because then. Atomic layer deposition (ALD) has been the most frequently utilized deposition technique for ferroelectric doped HfO2 thin films, and the matured ALD techniques and subsequent easy doping are important advantages of ferroelectric doped HfO2 thin films compared to the conventional ferroelectrics. In this chapter, therefore, the ferroelectricity in doped HfO2 and various potential factors that can affect its electric properties will be intensively reviewed. In particular, dopant species, doping concentration, and annealing temperature will be focused on as critical factors that influence the crystalline structure and resulting electric properties based on the existing literature.