Layer-by-layer MoS2:GO composite thin films for optoelectronics device applications

Abstract

Abstract With reference of our previous report (Appl. Surf. Sci. 474(2019)227), the molybdenum disulphide (MoS2) thin film were prepared by the dip-coating technique at different temperatures (400\u202f°C–450\u202f°C) using methanolic solution of ammonium molybdate and ammonium thiocyanate that are used as bare-substrate for the deposition of graphene oxide (GO) thin films. For the deposition of graphene oxide (GO), commercially purchased GO (0.5\u202fmg in 10\u202fmL aqueous solution) was deposited by dip-coating technique on dip-deposited MoS2 thin film to make layer-by-layer MoS2:GO composite thin films and hence studied their electronic and electrical behaviours. The micro-structural and surface morphology were studied using Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy, whereas optical band estimated from the optical absorption spectra. The electronic structure and their bonding properties were studied using X-ray photoelectron spectroscopy and the electrical behaviours were observed from the current-voltage (I-V) characteristic curve. The formation of different phases of MoS:GO thin films show an enhanced electronic and electrical performance due to their unique-structure and the synergetic effect of MoS2:GO nanosheets when compared to those of bare MoS2.