Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals

Abstract

Abstract In this paper, the effects of Te inclusions on the optical and electrical properties of CdMnTe and CdMgTe crystals grown by the modified vertical Bridgman method were investigated. For CdMnTe ingot, the average size and density distribution of Te inclusions along axial direction were in the range of 12\xa0~\xa029\xa0μm and 1.53\xa0×\xa0104 cm−2\xa0~\xa02.81\xa0×\xa0105 cm−2, respectively. For CdMgTe ingot, the average size and density distribution of Te inclusions were in the range of 6\xa0~\xa020\xa0μm and 8.17\xa0×\xa0103 cm−2\xa0~\xa02.42\xa0×\xa0104 cm−2, respectively. The density and size of Te inclusions increased gradually from the first-to-freeze part to the last-to-freeze part for CdMnTe ingot, while that of CdMgTe ingot first decreased and then increased. For both CdMnTe and CdMgTe ingots, the resistivity, IR transmittance and FWHM of (D0, X) peak first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The middle-to-freeze parts of both ingots had the best crystal quality. For both CdMnTe and CdMgTe detectors, the energy resolution and (μτ)e value were first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The detectors fabricated by the middle-to-freeze parts of both crystals had the best performance and can could meet the requirements of room temperature radiation detection. PACS: 78.30.Fs; 78.55.Et; 81.40.Ef.