Materials Letters | 2019
Ytterbium silicide nanostructures prepared by pulsed laser ablation in oven: Structural and electrical characterization
Abstract
Abstract Ytterbium silicide nanoobjects were synthetized using pulsed laser ablation in an oven at temperatures of 800 and 1000\u202f°C. Ablation of divided target Si/Yb in a flow of Ar resulted in deposits which contained mostly ytterbium silicide nanowires, nanorods and nanoparticles. Single nanoparticles (800\u202f°C) are identical with Yb3Si5 alloy; nanorods possess both a monoclinic phase not corresponding to any known structure in the phase diagram Yb-Si and a face-centered cubic structure close to the pure Yb but with a high Si content. At the temperature of 1000\u202f°C, the studied nanorods and nanowires decorated by nanocrystals are practically amorphous, whereas the structure of those nanocrystals is close to that of the nanorods with the face-centered cubic structure prepared at 800\u202f°C. Nanowire (1000\u202f°C) is a semiconductor with ρ\u202f=\u202f132.9\u202fΩ.cm at room temperature, which is comparable to a heavily doped silicon.