Influence of sulfurization temperature on the molybdenum disulfide thin films grown by thermal vapour sulfurization

Abstract

Abstract Molybdenum disulfide (MoS2) thin films can be grown using carbon disulfide (CS2) as the sulfurizing source. The surface morphology of MoS2 thin film was improved as the sulfurization temperature increased from 750 °C to 850 °C. However, the decomposition of MoS2 thin film occurred at 900 °C. Next, X-ray diffraction patterns showed the presence of MoS2 (002) peak at ∼14°. A high intensity peak was detected for the temperature of 850 °C, but its intensity then decreases for 900 °C. Apart from that, the absorption features of MoS2 were found at ∼667 nm, ∼617 nm, and ∼440 nm, corresponding to the exciton energies A, B, and C of MoS2, respectively. Resonant Raman modes of grown MoS2 revealed the existence of multilayers of MoS2.