Fabrication of ultraviolet photodetector with aluminum nitride nanowire networks via direct transfer method

Abstract

Abstract This paper presents the fabrication of an ultraviolet (UV) photodetector based on Aluminum nitride nanowire (AlNNW) networks on a flexible polyvinyl chloride (PVC) substrate. The device was fabricated via a direct transfer method through a very low-cost non-lithographic fabrication scheme. The device has demonstrated very fast photoresponse rise and decay times of 0.27\u202fs and 0.41\u202fs to UV light illumination at 15\u202fV, respectively. Moreover, the device exhibited a good photocurrent response at 2\u202fV bias enabling very high sensitivity and capability of the AlNNW device operating at low voltages. Furthermore, the facile fabrication scheme is very cost-effective, readily scalable; and offers broad integration capabilities, with further optimization, in various flexible electronic and photonic applications.