Crosstalk analysis of coupled MLGNR interconnects with different types of repeater insertion

Abstract

Abstract This paper investigates crosstalk (XT) analysis of emerging multi-layer graphene nanoribbons (MLGNR) as chip interconnect material with different types of repeater insertions. The performance of repeaters comprising of FinFET and carbon nanotube field effect transistor (CNFET) have been evaluated based on the equivalent single conductor (ESC) model. Using three-line bus architecture, the worst-case XT delay on the victim line for armchair (ac) and zig-zag (zz) based MLGNR interconnects have been computed for local/ intermediate and global levels. The detailed crosstalk investigations include in-phase (IP), out-of-phase (OP), and net XT induced delay. Also, the peak crosstalk noise voltage and average power consumption have been computed for MLGNR interconnects. The SPICE simulation results further indicate reduced crosstalk delay at local/intermediate levels for MLGNR based interconnects with degradation at global level. The reductions observed in worst-case XT induced delay for MLGNR interconnects with FinFET repeaters are 41.54, 34.57, and 19.71% and with CNFET repeaters are 47.47, 30.91, and 20.65% as compared to Copper (Cu) interconnects for interconnect lengths of 100, 500, and 1000\u202fµm, respectively. Significant reductions in peak crosstalk noise voltage amplitude have been observed for local/intermediate level MLGNR interconnects as compared to Copper.