Promoting photoresponse of resistive detector based on V0.15Sn0.85Se2 ternary alloy

Abstract

Abstract In order to produce high performance optoelectronic device, alloy engineering holds good promise as technique for synthesis of materials having excellent properties. The direct vapour transport grown V0.15Sn0.85Se2 multilayer crystals are employed for fabrication of high performance photodetector. The detector showed reproducible and stable performance towards white light and also exhibited efficient sensitivity towards variation of intensities ranging from 20 to 120\u202fmW/cm2. Subsequently, the detector is exploited for its broadband response in spectral range 480\u202fnm, 560\u202fnm and 670\u202fnm illuminations. In addition, the photoresponse of detector is also exploited in temperature range 140–300\u202fK. Furthermore, the detector is investigated for variation in response in ambient air and vacuum (10−3 Torr). Overall, the detector exhibited efficient performance under variety of illuminations and in different conditions which is required for high performance device.