Materials Science in Semiconductor Processing | 2019
GaN-on-Si HEMTs for wireless base stations
Abstract
Abstract Gallium Nitride, in the form of epitaxial HEMTs (High Electron Mobility Transistor), is now almost universally acknowledged as the replacement for silicon bipolar and power LDMOS (Laterally Diffused Metal Oxide Semiconductor) devices as the primary active element for linear power amplification in RF (Radio Frequency), microwave, and mmW (Millimeter Wave) base station applications. This is particularly true for GaN-on-SiC (Silicon Carbide) discrete HEMT devices and MMIC s (Monolithic Microwave Integrated Circuits) which enable the state-of-the-art high frequency performance and bandwidth required for sub-6 GHz frequency bands covering both 4G and 5G systems as well as able to be extended into Ku-Band and Ka-Band applications. The challenge for GaN-on-Silicon technology is to take advantage of these industry accepted GaN-on-SiC results and leapfrog not only the high frequency/high power performance but also drive GaN into a new cost paradigm, enabling the opening of 5G applications currently beyond the price point of silicon carbide based systems.