Positron annihilation studies on N+ implantation induced vacancy type defects and its recovery in SI: 6H- SiC

Abstract

Abstract Variable energy positron beam with Doppler broadening spectroscopy (DBS) was used to investigate the depth-resolved defects formed by two fluencies of 130\xa0keV\xa0N+ implanted in Semi Insulating (SI) 6H-SiC. The implanted ions induced damages near the surface and to a depth of 300\xa0nm as simulated by SRIM analysis. Defects recovery, accumulation, and its behavior with two annealing temperatures were also considered. Defect types and its effect on annealing were analyzed from the changes in electron momentum and modeled as layers using variable energy positron fitting (VEPFIT) methods. Inclusion of electric field strength in the fitting procedure supported layer characteristics and the state of charge carriers. Di-vacancies, vacancy complexes observed in the damaged layers were agglomerated at the surface and tend to cure on annealing.