Observations of the initial stages on reactive gas-timing sputtered TaO thin films by dynamic in situ spectroscopic ellipsometery

Abstract

Abstract Dynamic in-situ spectroscopic ellipsometry (iSE) was employed to investigate the growth mechanism of the tantalum oxide (TaO) film on silicon wafer substrate deposited by reactive gas-timing RF magnetron sputtering compared with conventional reactive sputtering. The effect of reactive gas timing parameter on physical structure and optical property were analyzed by both the continuous and island film growth model with Tauc-Lorentz optical model. The variation of refractive index, film thickness and void volume fraction were obtained from dynamic fits of iSE data indicated that the growth process of the amorphous TaO thin films was divided into two regimes: the nucleation stage and continuous-layer stage. These stages were observed during deposition although the initial film growth stage corresponds to the island film growth model. The study demonstrates that sputtered TaO by the RGT technique at the O2 on-off gas timing has played a crucial factor in improving the formation of nucleation stage and that the deposited TaO thin films were high deposition rate with high refractive index. The complementary field emission scanning electron microscope (FE-SEM) and transmission electron microscope (TEM) showed a good agreement with the film thickness and morphology obtained from dynamic iSE measurement. The real-time monitoring of iSE offers important evidences to understand the growth mechanism of reactive gas-timing technique.