Optical Materials | 2019
Room-temperature infrared photoluminescence in GaN doped with various impurities
Abstract
Abstract The steady-state infrared-photoluminescence spectra (IR-PL) emitted from about 400\u202fμm thick, free-standing GaN wafers, grown by the ammono-thermal and hydride vapour-phase epitaxy GaN, and containing carbon, magnesium, manganese and iron doping have been examined. The room-temperature IR-PL spectra are correlated with pulsed-photo-ionization spectra using van Roosbroeck-Schockley approach for spectrum conversion. It has been revealed that iron and carbon dopants appear as the most efficient impurities for the room temperature of infra-red emission from GaN grown using different technologies.