Effects of hydrogen annealing temperature on the structural and physical properties of In1.925Cr0.05Cu0.025O3 thin films

Abstract

Abstract The structural, optical, electrical and magnetic properties of In1.95Cr0.05Cu0.025O3 thin film annealed in hydrogen at different temperature (TH\xa0=\xa0300, 400, 500, and 600\xa0°C) were investigated. The film was amorphous at TH\xa0=\xa0300\xa0°C and had single phase In2O3 at TH\xa0=\xa0400\xa0°C, while mixed phases of In2O3, In and CuCr2O4 were observed at TH\xa0=\xa0500 and 600\xa0°C. At TH\xa0=\xa0400\xa0°C the film showed semiconducting like behavior. The film s transparency decreased with increasing TH, and optical band gap decreased from 3.67\xa0eV for film annealed at TH\xa0=\xa0400\xa0°C to 3.0\xa0eV for film annealed at TH\xa0=\xa0600\xa0°C. The magnetization increased for film annealed at TH\xa0=\xa0400 and 500\xa0°C while it disappeared at TH\xa0=\xa0600\xa0°C. The structural and physical properties were discussed and compared with that for film annealed in air at TAir\xa0=\xa0500\xa0°C.