Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Abstract

Abstract This paper, numerically assesses the analog/RF performance of nanoscale negative capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The simulation study is based on the non-equilibrium Green s function (NEGF) formalism in conjunction with the self-consistent device electrostatics, including the Landau–Khalatnikov (L-K) equation and the ballistic transport conditions. The proposed nanoscale analog transistor is endowed with four multi-objective improvement assets, namely, gate-all-around (GAA) configuration for the best gate control, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gating structure for boosting the device performance via the NC feature, junctionless paradigm for simplifying the fabrication processes, and the carbon nanotube-based channel due to its exploitable transport benefits. The quantum simulation study investigates the transfer and output characteristics, transconductance, drain conductance, transconductance efficiency, gate capacitance, and cut-off frequency. We have also studied and analyzed the impact of ferroelectric thickness on the device figures of merit. The NCJL-CNTFET have exhibited several distinctive behaviors, namely, shift in threshold voltage , negative differential resistance, and negative conductance. Moreover, it has been found that utilizing the NC paradigm can significantly boost the performance of the JL-CNTFET in terms of transconductance, gate capacitance, and transconductance efficiency. Our encouraging results make the studied NCJL-CNTFET a promising candidate for high-performance and low-power analog/RF applications.