Ba-acceptor doping in ZnSnN2 by reactive RF magnetron sputtering: (002) faceted Ba–ZnSnN2 films

Abstract

Abstract Zn-IV-N2 semiconductors display outstanding optoelectronic behavior and hence developed as an effective thin film absorber materials in photovoltaic devices. However, alkaline-earth metallic dopants can improve the performance of Zn-IV-N2 semiconductors. In view of this, Ba acceptor was successfully doped into ZnSnN2 crystal lattice with various dopant concentrations (∼0–7%) by reactive RF magnetron co-sputtering at 450\u202f°C. The orthorhombic structured Ba doped ZnSnN2 (Ba:ZTN) films with preferential orientation along (002) plane were obtained. Hall measurement studies revealed that the type of conduction is changed from the conventional n-type to p-type via Ba doping. The deposited Ba:ZTN films exhibited high hole concentration in the range of 1018-1019\u202fcm−3 with low resistivity of ∼10−1 Ωcm and a reasonable mobility of ∼0.5–5\u202fcm2\u202fV−1\u202fs−1. The doping of Ba at either Zn or Sn site would be responsible for the p-type conductivity in Ba:ZTN films. The variations in the surface properties such as morphology and topography of ZnSnN2 on Ba doping were described by FE-SEM and AFM analysis. Further analysis by UV–Vis–NIR and X-ray photoelectron spectroscopies were also performed in order to reveal the optical performance and chemical bonding composition of Ba:ZTN thin films. The existence of Ba2+ ions in Ba:ZTN was confirmed by the obtained binding energies from XPS analysis. From the collective results, it is suggested that Ba:ZTN could be employed as effective p-type layer in thin film solar cells.