Materials Today: Proceedings | 2021
Influence of the properties of p-a-Si:H layer and the work function of front contact on silicon heterojunction solar cell performance
Abstract
Abstract Heterojunction c-Si and hydrogenated amorphous silicon (a-Si:H) devices with intrinsic a-Si:H thin layer, known as HIT solar cells, are promising alternatives to conventional c-Si solar cells for the possibility of higher open circuit voltage, low temperature processing and lower costs. We have studied the influence of the properties of p-a-Si:H layer and the work function of the front electrode material on the performance parameters of n-c-Si based HIT solar cells using numerical simulation. The findings are further analyzed using energy band diagrams and carrier concentration profiles at the heterointerface of a-Si:H/n-c-Si to reveal the underlying charge transport mechanisms.