Novel strategies for fine-segmented Low Gain Avalanche Diodes

Abstract

Abstract Low Gain Avalanche Diodes (LGADs) are now considered a viable solution for 4D-tracking thanks to their excellent time resolution and good resistance to high radiation fluence. However, the currently available LGAD technology is well suited only for applications that require coarse space precision, pixels with pitch in the range 500\xa0µm–1\xa0mm, due to the presence of a no-gain region between adjacent pixels of about 50 μ m , in which the gain is completely suppressed. In this paper, we will discuss the segmentation issues in the LGAD technology and we will present two new segmentation strategies aimed at producing LGADs with high spatial resolution and high fill factor. The first presented design is the so-called Trench-Isolated LGAD (TI-LGAD). Here, the pixel isolation is provided by trenches, physically etched in the silicon and then filled with silicon oxide. The second design is the Resistive AC-coupled Silicon Detector (RSD), an evolution of LGADs, where the segmentation is obtained by means of AC-coupled electrodes. Prototypes of both designs have been produced at FBK and characterized at the Laboratories for Innovative Silicon Sensors (INFN and University of Turin) by means of a laser setup to estimate the space resolution and the fill factor. The functional characterization shows that both the technologies yield fully working small pixel LGADs (down to 50\xa0µm), providing the first examples of sensors able to concurrently measure space and time with excellent precision.