Bottom-contact passivation for high-performance perovskite solar cells using TaCl5-doped SnO2 as electron-transporting layer

Abstract

Abstract Organic-inorganic hybrid perovskite solar cells (PSCs) possess the promising potential to substitute photovoltaic technologies in the traditional model. The modified SnO2 as an electron-transporting layer (ETL) has been studied extensively because of its excellent properties. Herein, we implemented the TaCl5 doped SnO2 ETL in the n-i-p structure perovskite solar cells. The doped SnO2 solution was demonstrated the characterization of neutral power of value and hydrophobicity. The conduction band of changed ETLs shifted downward by 0.26\xa0eV resulting in the efficient electron transfer. Furthermore, the doped SnO2 films affect the perovskite crystallite size with passivated traps and reduced nonradiative recombination loss. After employing TaCl5-doped SnO2 ETL, the open-circuit voltage enhances from 0.97 to 1.08\xa0V and a united power conversion efficiency increases from 16.38% to 18.23% achieved when adopted 1.0\xa0wt% doped TaCl5–SnO2 TEL. The developed doping method provides an effective method to passivate SnO2 for fabricating high-performance perovskite solar cells.