Electric field-controlled crossover effect in oxygen-deficient titanium-oxide memory bits

Abstract

Abstract In this letter, we report an unusual crossover in the current-voltage characteristics of forming-free titanium oxide-based memory bits. The voltage at which crossover between high and low resistance states take place, Vcr gradually shifts to lower bias values with either decreasing sweeping rates, increasing maximum scan voltage or increasing current compliance. Interestingly, the crossover effect is not pronounced for reduced-oxide based memory bits. The mechanism behind these changes in the I-V curves is discussed.