The effects of ion implantation on rhenium and tin dichalcogenide ultrathin films

Abstract

Abstract Investigations were carried out on the effects of rhenium and tin chalcogenide ultrathin films using an ion implantation method for specific characteristics and wide applications. ReS2, ReSe2, SnS2, and SnSe2 films were implanted with 300\u202fkeV O ions at a fluence of 1\u202f×\u202f1014\u202fions/cm2. The research focused on the evolution of the morphology, crystallinity and structure of the films through atomic force microscopy, X-ray diffraction, Raman scattering and photoluminescence before and after ion implantation. The results showed diverse changes in different films, such as thickness decreases in the ReS2, ReSe2, and SnS2 films and smoothing effects in the ReS2, ReSe2, and SnSe2 films. In terms of crystallinity, small decrements were observed only in ReSe2 and SnSe2 films. The Raman modes of ReS2 film exhibited redshifts which also appeared in the photoluminescence peaks of ReS2, ReSe2, SnS2, and SnSe2 films. The results indicate feasible modification of film properties by ion implantation, which also bring new possibilities and options to ultrathin material research.