A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency.

Abstract

Electroluminescence can be generated from a wide variety of emissive materials using a simple, generic device structure. In such a device, emissive materials are deposited by various means on a metal oxide semiconductor capacitor structure across which alternating current voltage is applied. However, these devices suffer from low external efficiencies and require the application of high voltages, thus hindering their practical usage and raising questions about the possible efficiencies that can be achieved using alternating current driving schemes in which injection of bipolar charges does not occur simultaneously. We show that appropriately chosen reactive electrical components can be leveraged to generate passive voltage gain across the device, allowing operation at input voltages below 1 V for devices across a range of gate oxide thicknesses. Furthermore, high power efficiencies are observed when using thermally activated delayed fluorescence emitters deposited by a single thermal evaporation step, suggesting that the efficiency of a light-emitting device with simplified structure can be high.