Annealing Effects on Gas Sensing Response of Ga-Doped ZnO Thin Films

Abstract

The high thermal conductivity, high electron mobility, the direct wide band gap, and large exciton binding energy of zinc oxide (ZnO) make it appropriate for a wide range of device applications like light-emitting diodes, photodetectors, laser diodes, transparent thin-film transistors, and so forth. Among the semiconductor metal oxides, zinc oxide (ZnO) is one of the most commonly used gas-sensing materials. The gas sensor made of nanocomposite ZnO and Ga-doped ZnO (ZnO:Ga) thin films was developed by the sol–gel spin coating method. The gas sensitivity of gallium-doped ZnO thin films annealed at 400, 700, and 900 °C was studied for ethanol and acetone gases. The variation of electrical resistance of gallium-doped ZnO thin films with exposure of ethanol and acetone vapors at different concentrations was estimated. Ga:ZnO thin films annealed at 700 °C show the highest sensitivity and shortest response and recovery time for both ethanol and acetone gases. This study reveals that the 5 at. % Ga-doped ZnO thin film annealed at 700 °C has the best sensing property in comparison to the film annealed at 400 and 900 °C. The sensing response of ZnO:Ga thin films was found higher for ethanol gas in comparison to acetone gas.