Chemical and structural configuration of Pt-doped metal oxide thin films prepared by atomic layer deposition

Abstract

Pt-doped semiconducting metal oxides and Pt metal clusters embedded in an oxide matrix are of interest for applications such as catalysis and gas sensing, energy storage, and memory devices. Accurate tuning of the dopant level is crucial for adjusting the properties of these materials. Here, a novel atomic layer deposition (ALD)-based method for doping Pt into In2O3 specifically, and metals in metal oxides in general, is demonstrated. This approach combines alternating exposures of Pt and In2O3 ALD processes in a single “supercycle” followed by supercycle repetition leading to multilayered nanocomposites. The atomic-level control of ALD and its conformal nature make the method suitable for accurate dopant control even on high-surface-area supports. The oxidation state, local structural environment, and crystalline phase of the embedded Pt dopants were obtained by means of X-ray characterization methods and high-angle annular dark-field scanning transmission electron microscopy. In addition, this approach ...