Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

Abstract

“This work was supported by the National Natural Science Foundation of China (Grant Nos 61106090, 61574147, 61474068), Zhejiang Provincial Natural Science Foundation for Distinguished Young Scholar (No. R17F040007), Ningbo Municipal Natural Science Foundation (No. 2014A610011), the Ningbo Natural Science Foundation of China (Grant Nos 2015A610034, 2011A610110, No. 2014B82004, Y10814VA0, 2016A610280), the State Key Basic Research Program of China (2013CB922300), Youth Innovation Promotion Association, Chinese Academy of Sciences and Royal Academy of Engineering, UK. The author appreciates the K.C. Wong Magna Fund in Ningbo University.”