Strain induced mobility enhancement in p-type silicon structures: Bulk and quantum well (quantum kinetic approach)

Abstract

Analytic expressions for low field mobility have been obtained in the high strained p-type silicon structures with three- and two-dimensional hole gases. Much attention is paid to study how confinement in one spatial dimension changes the strain mobility enhancement in comparison with bulk material. The mobility enhancement factor has been calculated when applying both the uniaxial and biaxial strains. Acoustic and optic phonons, charged impurities, and surface roughness have been accepted as a scattering system. Our theoretical consideration is based on the quantum kinetic equation and a special form of the non-equilibrium distribution function (shifted Fermi distribution). Results of the calculation are compared with known experimental data.Analytic expressions for low field mobility have been obtained in the high strained p-type silicon structures with three- and two-dimensional hole gases. Much attention is paid to study how confinement in one spatial dimension changes the strain mobility enhancement in comparison with bulk material. The mobility enhancement factor has been calculated when applying both the uniaxial and biaxial strains. Acoustic and optic phonons, charged impurities, and surface roughness have been accepted as a scattering system. Our theoretical consideration is based on the quantum kinetic equation and a special form of the non-equilibrium distribution function (shifted Fermi distribution). Results of the calculation are compared with known experimental data.