Enhancement of perpendicular magnetic anisotropy and spin-orbit torque in Ta/Pt/Co/Ta multi-layered heterostructures through interfacial diffusion

Abstract

Heavy metal/ferromagnetic metal bi-layered structures that exhibit both strong perpendicular magnetic anisotropy (PMA) and large spin-orbit torque (SOT) efficiency have high potential in high-density, low-power memory, and logic device applications. Here, we report the enhancement of PMA and SOT in Ta/Pt/Co/Ta multi-layered heterostructures through interfacial diffusion. The structures can exhibit PMA fields of 9100\u2009Oe at 300\u2009K and 14100\u2009Oe at 10\u2009K and an effective spin Hall angle (SHA) of 0.61\u2009±\u20090.03 at 300\u2009K. These values are larger than the corresponding values reported previously for similar heterostructures. The current-induced magnetization switching was demonstrated. The critical switching current density is on the order of 106 A/cm2, and the corresponding switching efficiency is higher than that reported for similar structures. X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy analyses suggest a strong correlation between the observed PMA and SOT enhancement and the interfacial diffusion during the sputtering growth of the samples. It is very likely that the interfacial diffusion gives rise to enhanced spin-orbit coupling at the interface, while the latter results in enhancement in the PMA, SHA, and switching efficiency in the structure.Heavy metal/ferromagnetic metal bi-layered structures that exhibit both strong perpendicular magnetic anisotropy (PMA) and large spin-orbit torque (SOT) efficiency have high potential in high-density, low-power memory, and logic device applications. Here, we report the enhancement of PMA and SOT in Ta/Pt/Co/Ta multi-layered heterostructures through interfacial diffusion. The structures can exhibit PMA fields of 9100\u2009Oe at 300\u2009K and 14100\u2009Oe at 10\u2009K and an effective spin Hall angle (SHA) of 0.61\u2009±\u20090.03 at 300\u2009K. These values are larger than the corresponding values reported previously for similar heterostructures. The current-induced magnetization switching was demonstrated. The critical switching current density is on the order of 106 A/cm2, and the corresponding switching efficiency is higher than that reported for similar structures. X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy analyses suggest a strong correlation between the observed PMA and...