The interface of epitaxial nanographene on GaN by PECVD

Abstract

It is believed that directly synthesized graphene on semiconductor and other non-catalytic substrates is a promising route to enable facile graphene integration into commercial electronic and optoelectronic devices. Here, the plasma enhanced chemical vapor deposition (PECVD) method has been used to synthesize nanographene directly on gallium nitride (GaN) at a low temperature (550°C). The epitaxial nanographene equipped optical transmittance and conductivity comparable to reduced graphene oxide or chemical exfoliated graphene. The Raman spectroscopy and atomic force microscopy (AFM) of the samples before and after growth have been compared. Besides, the interface between nanographene and GaN has been investigated by X-ray photoelectron spectroscopy (XPS). This research will be meaningful for directly integrating graphene with GaN-based optoelectronic and electronic devices.It is believed that directly synthesized graphene on semiconductor and other non-catalytic substrates is a promising route to enable facile graphene integration into commercial electronic and optoelectronic devices. Here, the plasma enhanced chemical vapor deposition (PECVD) method has been used to synthesize nanographene directly on gallium nitride (GaN) at a low temperature (550°C). The epitaxial nanographene equipped optical transmittance and conductivity comparable to reduced graphene oxide or chemical exfoliated graphene. The Raman spectroscopy and atomic force microscopy (AFM) of the samples before and after growth have been compared. Besides, the interface between nanographene and GaN has been investigated by X-ray photoelectron spectroscopy (XPS). This research will be meaningful for directly integrating graphene with GaN-based optoelectronic and electronic devices.