High-efficient Sb2Se3 solar cell using ZnxCd1-xS n-type layer

Abstract

Sb2Se3 has drawn wide attention in thin-film solar cells in recent years because of its advantages of low-cost, low-toxic, and physicochemically stable properties. The most efficient Sb2Se3 solar cells are based on a CdS/Sb2Se3 heterojunction, but the cliff-like conduction band offset at the CdS/Sb2Se3 interface causes detrimental interface recombination. In this Letter, we apply the ZnxCd1-xS to tune the interface band alignment. When x is equal to 0.163, the flatband results in an optimal efficiency of 7.02%, which is absolutely 0.6% higher than the control device with pure CdS.