β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

Abstract

In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various β-Ga2O3 periodic fin widths of 1.5/3/5\u2009μm are demonstrated with the incorporation of p-type NiOx. The β-Ga2O3 HJBS diode achieves a low specific on-resistance (Ron,sp) of 1.94 mΩ\u2009cm2 with a breakdown voltage of 1.34\u2009kV at a β-Ga2O3 periodic fin width of 3\u2009μm, translating to a direct-current Baliga s power figure of merit (PFOM) of 0.93\u2009GW/cm2. In addition, we find that by shrinking the β-Ga2O3 width, the reverse leakage current is minimized due to the enhanced sidewall depletion effect from p-type NiOx. β-Ga2O3 HJBS diodes with p-type NiOx turn out to be an effective route for Ga2O3 power device technology by considering the high PFOM while maintaining a suppressed reverse leakage current.