Structural and impedance analysis of Ba0.9925Er0.0075TiO3 for microelectronic application

Abstract

The Ba0.9925Er0.9975TiO3 ceramics that were prepared via solid-state reaction route were found to be phase pure at the final sintering temperature of 1350°C. The highest value of the dielectric constant is about 9000 measured at 10Hz and decreases to about 1000 at the Curie temperature at much higher frequencies. The Ba0.9925Er0.9975TiO3 is found to be of high-K dielectric materials with properties a thousand times greater than SiO2. At room temperature application, the Ba0.9925Er0.9975TiO3 exhibits a dielectric constant value from 1000 to 2500, depending upon the frequencies. The conductivity and activation energy of the Ba0.9925Er0.9975TiO3 lies in the semiconductor region. The dielectric loss is a very low and very suitable candidate for microelectronic applications.