Electronic properties of intrinsic vacancies in single-layer CaF2 and its heterostructure with monolayer MoS2

Abstract

Exploring gate insulator materials for 2D transistors and their defect properties is of importance for device performance optimization. In this work, the structural and electronic properties of intrinsic vacancies in the CaF 2 single layer and its heterostructures with monolayer MoS 2 are investigated from first-principles calculations. V Ca introduces a shallow defect level close to the VBM, whereas V F introduces a deep level below the CBM. In both cases, spin polarization is observed. Overall, V F has a relatively lower formation energy than V Ca, except for the extreme Ca-rich case. Thus, V F should be dominant in CaF 2. The band offset between CaF 2 and MoS 2 is determined to be type-I, with large offsets at both the conduction band and valence band. With the presence of vacancies in CaF 2, the type-I band offset is preserved. The electron or hole on the defect states will transfer from CaF 2 to MoS 2 due to the large band offset, and spin polarization vanishes. Nevertheless, there are no defect states inside the gap or around the band edge of MoS 2, and the electronic properties of MoS 2 are almost intact. Compared with h-BN that has a small valence band offset with MoS 2 and could introduce in-gap defect states, CaF 2 can be a good candidate to serve as the dielectric layer of MoS 2-based transistors.